HAMAMATSU (Japan) silicon photodiode S1226-18BU TO-18 – in stock

Si photodiode

S1226-18BU

For precision photometry in the UV to visible spectrum; suppressed near-IR sensitivity

Features
– High UV sensitivity: QE = 75 % (λ = 200 nm)
– Suppressed near-infrared sensitivity
– Low dark current
– High reliability

For precision photometric measurements in the UV to visible spectrum; suppresses sensitivity to the near-infrared

Features

- High UV sensitivity: QE = 75% (λ = 200 nm)

- Suppression of near-infrared sensitivity

- Low dark current

- High reliability

Specifications

Photosensitive area	1.1 × 1.1 mm
Number of elements	1
Package	Metal
Package category	TO-18
Cooling	Uncooled
Reverse voltage (max.)	5 V
Spectral response range	190 to 1000 nm
Peak sensitivity wavelength (typ.)	720 nm
Photosensitivity (typ.)	0.36 A/W
Dark current (max.)	2 pA
Rise time (typ.)	0.15 μs
Terminal capacitance (typ.)	35 pF
Noise equivalent power (typ.)	1.6 × 10⁻¹⁵ W/Hz¹/²
Measurement conditions	Ta = 25 °C, typical; Photosensitivity: λ = 720 nm; Dark current: VR = 10 mV; Terminal capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications

Sensitive area: 1.1 × 1.1 mm

Quantity: 1

Packaging: aluminium foil pouch

Package type: TO-18

Cooling: No cooling

Reverse voltage (maximum) 5 V

Spectral response range: 190 to 1000 nm

Peak sensitivity wavelength (typical value): 720 nm

Photosensitivity (typical value) 0.36 A/W

Dark current (maximum) 2 pA

Rise time (typical) 0.15 μs

Terminal capacitance (typical value) 35 pF

Equivalent noise power (typical value) 1.6×10⁻¹⁵ W/Hz¹/²

Test conditions: Ta = 25 °C (typical value); light sensitivity: λ = 720 nm; dark current: VR = 10 mV; terminal capacitance: VR = 0 V; f = 10 kHz, unless otherwise stated