日本滨松HAMAMATSU硅光电二极管 S1226-18BU TO-18 现货库存

Si photodiode

S1226-18BU

For UV to visible, precision photometry; suppressed near IR sensitivity

Features
– High UV sensitivity: QE＝75 % (λ=200 nm)
– Suppressed near IR sensitivity
– Low dark current
– High reliability

用于紫外到可见光的精密光度测定；抑制近红外灵敏度

特征

-高紫外灵敏度：QE＝75%（λ=200 nm）

-抑制近红外灵敏度

-低暗电流

-高可靠性

Specifications

Photosensitive area	1.1 × 1.1 mm
Number of elements	1
Package	Metal
Package category	TO-18
Cooling	Non-cooled
Reverse voltage (max.)	5 V
Spectral response range	190 to 1000 nm
Peak sensitivity wavelength (typ.)	720 nm
Photosensitivity (typ.)	0.36 A/W
Dark current (max.)	2 pA
Rise time (typ.)	0.15 μs
Terminal capacitance (typ.)	35 pF
Noise equivalent power (typ.)	1.6 × 10 -15  W / Hz 1/2
Measurement condition	Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

规格

感光面积1.1×1.1mm

单位数量1

包装：铝箔袋

包装类别：TO-18

冷却：非冷却

反向电压（最大值）5 V

光谱响应范围190至1000 nm

峰值灵敏度波长（典型值）720nm

光敏性（典型值）0.36 A/W

暗电流（最大值）2 pA

上升时间（典型值）0.15μs

终端电容（典型值）35 pF

噪声等效功率（典型值）1.6×10-15 W/Hz 1/2

测量条件Ta=25℃，典型值，光敏度：λ=720nm，暗电流：VR=10mV，端子电容：VR=0V，f=10kHz，除非另有说明